| 摘要 |
PURPOSE:To provide a writable read-only memory device with a high operating speed. CONSTITUTION:When a lower voltage than breakdown strength of a drain 12 area is applied to between a drain 12 of a MOS structure transistor and a second conductor 20, an electric insulation state is destroyed to provide an insulation film 16, so that the drain 12 is electrically connected with the second conductor 20. |
