SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE:To provide the title semiconductor device and manufacturing method capable of displaying excellent breakdown voltage characteristics and leakage resistance characteristics between a lower electrode layer and an upper electrode layer comprising the capacitor of a DRAM. CONSTITUTION:Within a recession formed between the sidewall of a contact hole 141a and the surface of a buried conductive layer 142, a sidewall spacer 154 in its film thickness slowly increasing from the top of an interlayer insulating film 141 to the surface of the buried conductive layer 142 is provided on the sidewall of the contact hole 141a.