| 摘要 |
An indium borate phosphor of this invention is represented by formula (Inl-a-b-c-dTbaEubSmcMd)BO3 wherein [1] if b NOTEQUAL 0 and c NOTEQUAL 0, 1x10-6</=a</=1x10-2 0<b</=1x10-1 0<c</=1x10-3 1x10-7</=d</=1x10-2 [2] if b=c=0, 1x10-6</=a</=1x10-1 1x10-7</=d</=1x10-2 and M is at least element selected from the group consisting of Ti, P, Si, and Ge. This phosphor has a higher bonding force between BO3 ions and ions of In or any other contained metal than that of a conventional indium borate phosphor. As a result, the current-brightness and burning characteristics of the indium borate phosphor can be greatly improved.
|
