| 摘要 |
PURPOSE: To provide a grating dispersed feedback laser having accurately controlledκL value. CONSTITUTION: A DFB semiconductor laser is improved. In particular, this laser has a modal decay length t0 with parameterα, the multilayered structure of a semiconductor element is composed of a planar active layer 13, diffraction lattice layer 15 which is approximately parallel to the active layer 13 and spacer layer 14, having a thickness ts between the layers 13, 15 where ts is within±10% of t0 /(1-α). The spacer layer thickness is adequately selected to make invariant theκL value of at least a certain type of DFB lasers against inevitable variation in the manufacturing conditions, resulting in an elevated product yield.
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