| 摘要 |
PURPOSE:To provide a semiconductor device of a structure where an intermetallic compound film is formed in the connection part between both of an electrode and a wiring by heating and the electrode and the wiring, which respectively consist of different metal films, are connected to each other in such a way that an intermetallic compound film is not formed in the connection part between both even if the electrode and the wiring are heated, and a method of manufacturing the device. CONSTITUTION:An Au electrode 4a is formed on a GaAs substrate 1, an insulating film 7 is formed in such a way as to cover the electrode 4a, a contact hole 7a is formed in the film 7 in such a way that the surface of the electrode 4a is exposed at the bottom of the hole 7a, a WSiN film 8 is formed on the surface of the exposed electrode 4a, the inner peripheral surface of the hole 7a and the film 7 by reactive sputtering, an Al film 9 for wiring is formed on the film 8 and after this, the films 8 and 9 are patterned into a prescribed pattern. |
