| 摘要 |
A device for epitaxially growing SiC by Chemical Vapour Deposition on a substrate (9) comprising a susceptor (8) adapted to receive the substrate thereon, a tube (6) arranged to lead a gas mixture containing precursors for said growth closely over and past the substrate and means (10) for heating the susceptor and thereby the substrate and said gas mixture for said growth. Making the tube (6), at least close to the susceptor, of graphite improves the uniformity of the epitaxial growth of SiC on the substrate. Cooling of the walls of the tube close to the susceptor is not necessary. |
