SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE:To reduce a current consumption by inputting a row selection signal and a column selection signal into a selection transistor for selecting a memory cell and also shorten the distance between a bit line and a sense amplifier to raise the transmission efficiency of memory cell data. CONSTITUTION:In a memory cell array connecting a row selection signal and a column selection signal to a plurality of selection transistors connecting a memory cell to a bit line, a column decoder 18 is provided on one end side of the bit line and a sense amplifier 5 is provided on another end side.