| 摘要 |
PURPOSE:To cut down the time of process such as developing and etching to be conducted after exposure pertaining to the forming method which can be applied to the formation of a pattern on a substrate using a resist pattern for the alignment mark on a substrate in a photolithographic process which is one of semiconductor device manufacturing processes. CONSTITUTION:After a resist 13 is formed on a substrate 11 and the resist 13 is patterned (the part of alignment mark 17 in the diagram), the substrate is etched simultaneously with developing. To conduct the above-mentioned operation, a developing solution, with which developing and etching can be performed simultaneously (as gallium arsenide is used for the substrate 11 in the embondiment, alkaline development solution is used), is selected, and a light 15 under prescribed condition is projected while the developing operation is conducted in order to increase the etching speed. |
