Apparatus and method for treating substrates

摘要

A substrates treating apparatus comprising a chamber provided with a section at which a semiconductor wafer is treated and with another section at which plasma is generated. A supplier for supplying mixed gas (O2+CF4) into the plasma generating section in the chamber, high frequency electrodes for changing the gas into plasma, an ion trap for trapping ions in the plasma to send neutral radicals into the wafer treating section, and an exhaust mechanism for exhausting the wafer treating section.