发明名称 After etch test method and apparatus
摘要 There is a post etching test apparatus and method to be able to only test just a few die on the wafer. Uniquely, the remainder of the die on the wafer can be salvaged, if the test identifies proper tolerances for the etching process over the entire wafer surface. If the tests show negative, the etch process can be re calibrated and the wafer can be reprocessed and tested again. Salvage of the majority of the die on the wafer under test is possible by using a fine point resist removal plate. Specifically, oxygen is forced over certain die on the wafer to remove the resist mask by using a plate barrier with only a few holes in it. The holes are located a key positions around the wafer, and restrain the oxygen laminar flow to effect only the wafers directly below these holes.
申请公布号 US5385629(A) 申请公布日期 1995.01.31
申请号 US19930137674 申请日期 1993.10.14
申请人 MICRON SEMICONDUCTOR, INC. 发明人 LAMBERTON, ALAN J.;LANGLEY, ROD C.
分类号 H01L21/66;(IPC1-7):H01L21/306;B44C1/22;B29C37/00 主分类号 H01L21/66
代理机构 代理人
主权项
地址