| 摘要 |
PURPOSE:To prevent the arrangement of atoms from being disordered due to the effect of a temperature or the like by a method wherein the atoms, which constitute a device, are buried in a groove, which is formed in a crystal face and has a depth and a width of the amount of one piece of an atom to the amount of a plurality of pieces of atoms, and an atom thin wire is formed into a structure where the atom thin wire can stably exist in the crystal face. CONSTITUTION:The surface atoms of atoms 21 constituting a substrate crystal are pulled out and a small groove 22 is formed. Then, atoms 23, which are used for forming an atom thin wire, are made to attract on the substrate surface, a voltage pulse is applied to a probe and the atoms 23 are diffused, whereby the atoms 23 are buried in the groove 22. The probe is moved to other region, a voltage pulse is again applied to the probe to diffuse the attracted atoms 23 left in the vicinity of the groove 22 to other region and the atoms 23 are removed. As this result, attracted atoms 24 in the groove 22 are arranged, are left into a thin linear form and the atom thin wire 25 is formed. As the wire 25 is buried in the groove formed in the surface of the substrate crystal and can stably exist in the substrate surface, it is used as the smallest electronic circuit constituent element, which is though in principle, and a far higher-density circuit can be constituted compared to an integrated circuit formed using a conventional process. |
