COPPER ALLOY ULTRATHIN WIRE FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

PURPOSE:To provide a copper alloy ultrafine wire for a semiconductor device and semiconductor device which have a high corrosion resistance at the junction between the chip and wire and can withstand heat cycles. CONSTITUTION:The copper alloy ultrafine wire in this invention involves the addition of at least 0.1ppm and less than 3.0ppm of Fe and Ag respectively and at least 0.5ppm and less than 20ppm of B to 99.9995% high purity oxygen free copper. Within a hardness range where bonding is possible, ball formation is good and a high reliability connection can be secured even under high temperature as well as difficult conditions.