SILICIDATION METHOD

摘要

The method includes the steps of forming a 1st silicon oxide (2) on an Si substrate (1) by thermal oxidation process, forming an amorphous oxide (7) thereon by using a LPCVD process under the pressure range of 200-250 mTorr. and the temp. range of 500-560 deg.C, forming a 2nd silicon oxide (4) thereon by using a thermal oxidation process under the temp. range of 700-900 deg.C and the O2 atmosphere, sputtering titanium materials thereonto under the substrate temp. of 200 deg.C and the basic pressure of 10-8 Torr., and heat-treating the Ti film (5) under the temp. range of 700-800 deg.C and the Ar atmosphere thereby forming a uniform titanium silicide layer (6) on the film (7).