发明名称 Method and apparatus for semiconductor device fabrication diagnosis and prognosis
摘要 A sensor (210) for diagnosis and prognosis of semiconductor device fabrication processes measures specular, scattered, and total surface reflectances and transmittances of semiconductor wafers (124). The sensor (210) comprises a sensor arm (212) and an opto-electronic control box (214), for directing coherent electromagnetic or optical energy in the direction of semiconductor wafer (124). Opto-electronic control box (214) includes circuitry for measuring the amounts of laser powers coherently reflected from and transmitted through the semiconductor wafer (124) surface and the amounts of electromagnetic powers scatter reflected from and transmitted through the semiconductor wafer (124) surface. The present invention determines specular, scattered, and total reflectance and transmittance as well as surface roughness values for semiconductor wafer (124) based on measurements of coherent and scatter reflected and transmitted laser powers. The sensor (210) of the present invention can also provide a go/no-go test of semiconductor fabrication process quality. A process control computer associates with the sensor (210) to respond to spectral reflectance and transmittance measurements yielding surface roughness and thickness measurements as well as diagnosis/prognosis analysis results and control signals.
申请公布号 US5270222(A) 申请公布日期 1993.12.14
申请号 US19900638468 申请日期 1990.12.31
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 MOSLEHI, MEHRDAD M.
分类号 G01B11/06;G01B11/30;G03F7/20;H01L21/00;H01L21/66;H01L21/68;(IPC1-7):G01J1/16;H01L21/268 主分类号 G01B11/06
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