Elektromigrationsüberwachungseinrichtung für integrierte Schaltungen.

摘要

The electromigration characteristics of integrated circuit conductors are determined by passing a high current for a short period of time through an inventive test structure. This provides a rapid test in a more accurate manner than with the prior art SWEAT (Standard Wafer-level Electromigration Accelerated Test) structure. The test results have been found to be well correlated with long-term low current electromigration tests. A sensitive differential test may be implemented that determines the effects of topography features. The inventive test technique can be performed on every wafer lot, or even every wafer, so that adjustments to the wafer fabrication process can be rapidly implemented.