发明名称 FORMATION OF PATTERN
摘要 PURPOSE:To lessen the influence of a ground surface substrate in the process for forming fine patterns by a chemical amplification type resist and to stably form the patterns of a high resolution. CONSTITUTION:A protective film 12 contg. carbon as one component is formed on a substrate 11 and a resist film 13 consisting of the chemical amplification type resist of a positive type or a negative type is formed on this protective film 12. The prescribed regions 14 of the resist film 13 are then selectively exposed and are further, the resist film is baked at a prescribed temp. The resist film 13 after the baking is subjected to development processing to selectively remove the exposed regions 14 or to allow these regions to remain, by which the resist patterns 16 of a positive type or the resist patterns 17 of a negative type are formed.
申请公布号 JPH0635206(A) 申请公布日期 1994.02.10
申请号 JP19920190996 申请日期 1992.07.17
申请人 TOSHIBA CORP 发明人 ONISHI KIYONOBU;SHIBATA TAKESHI;SHIOBARA HIDESHI;IKEDA TAKAHIRO
分类号 G03F7/038;G03F7/039;G03F7/11;G03F7/26;H01L21/027;(IPC1-7):G03F7/26 主分类号 G03F7/038
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