发明名称 ESD protection using NPN bipolar transistor.
摘要 <p>A circuit for protecting an IC against electrostatic discharge includes a npn transistor having its collector connected to a first I/O pad and its emitter connected to VSS. A zener diode has its cathode connected to the first I/O pad, its anode connected both to the base of the npn transistor and to a first resistor. The other end of the resistor is connected to VSS. &lt;IMAGE&gt;</p>
申请公布号 EP0583105(A1) 申请公布日期 1994.02.16
申请号 EP19930305942 申请日期 1993.07.27
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 MERRILL, RICHARD B.;REYNOLDS, DAVID C.;FARRENKOPF, DOUG
分类号 H01L27/06;H01L21/8234;H01L27/02;H01L27/088;(IPC1-7):H02H9/04 主分类号 H01L27/06
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