发明名称 |
ESD protection using NPN bipolar transistor. |
摘要 |
<p>A circuit for protecting an IC against electrostatic discharge includes a npn transistor having its collector connected to a first I/O pad and its emitter connected to VSS. A zener diode has its cathode connected to the first I/O pad, its anode connected both to the base of the npn transistor and to a first resistor. The other end of the resistor is connected to VSS. <IMAGE></p> |
申请公布号 |
EP0583105(A1) |
申请公布日期 |
1994.02.16 |
申请号 |
EP19930305942 |
申请日期 |
1993.07.27 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
MERRILL, RICHARD B.;REYNOLDS, DAVID C.;FARRENKOPF, DOUG |
分类号 |
H01L27/06;H01L21/8234;H01L27/02;H01L27/088;(IPC1-7):H02H9/04 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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