Method for producing a gate in a semiconductor device

摘要

A method for producing a gate in a semiconductor device is distinguished by the following steps: - a gate insulation film (2), an amorphous silicon film (3) and a polysilicon film (4) are applied sequentially on to a semiconductor substrate (1) one on top of the other; - impurity ions are implanted into the polysilicon film (4); - a first heat treatment of the structure thus obtained is carried out; - a layer (5) of high-melting metal is applied on to the polysilicon film (4); and - a second heat treatment is carried out, in order to form a polysilicide (polycide). By virtue of the method, losses of quality when producing a p<+> polysilicon gate (polygate) as a result of the penetration of impurities and by thermal instabilities are effectively avoided, so that a gate with improved electrical properties results. <IMAGE>