| 摘要 |
- Device associating a bipolar transistor (10) and a junction field-effect transistor (12) with a view to producing a higher output voltage (Vd) than the voltage BVCEO of the bipolar transistor (10). - A lateral extension (30) of the base region (28) forming the gate of the field-effect transistor is equipped with an aperture (38) in which a drain region (40) is situated. A heavily doped peripheral region (36), of the same type as the drain region (40), surrounds the lateral extension (30), on three sides, while a heavily doped buried layer region (34), forming a conducting collector part of the bipolar transistor (10), extends to under the peripheral region (36) and, with the latter, forms the source of the field-effect transistor (12). - Application: integrated circuits. <IMAGE> |
