POLARIZED ELECTRON BEAM GENERATING ELEMENT

摘要

PURPOSE:To provide a polarized electron beam generating element for providing high quantum efficiency without sacrificing the polarization factor. CONSTITUTION:The thickness (t) of a semiconductor photoelectric layer 18 is restricted within the range from the surface 22 to the node of a standing wave 24, and at least the vicinity of the loop adjacent to the side of the surface 22 of the node is included in the set value. The absorption of an exciting laser beam 20 can be drastically increased without unnecessarily increasing the thickness (t) of the semiconductor photoelectric layer 18. Since the thickness (t) of the semiconductor photoelectric layer 18 can be reversibly reduced to generate lattice deformation effectively in relation to the amount of absorption, high quantum efficiency can be achieved by a polarized electron beam generating element without sacrificing the polarization factor.