| 摘要 |
<p>PURPOSE:To generate electron beams with narrow energy width by stacking at least pair of second material and third material in order on the surface of a first material which is a conductor, and allying negative voltage to a facing anode to them. CONSTITUTION:A barrier layer 12 and a quantum well layer 13 whose thicknesses are the penetration length or less of an electron wave are placed on the surface of a conductor needle 11, and negative voltage against a facing electrode is applied to generate electron beams. For example, the needle 11 of an n<+> type GaAs single crystal is used as a test piece and the first material and the film 12 of an AlAs single crystal as the second material is grown at the tip of the needle 11, then the film 13 of a GaAS single crystal as the third material is grown on the film 12. They are put in a vacuum box, and the surface is cleaned by heating, then negative voltage against the facing electrode is applied to increase electrons by tunnel release. An electron beam source which releases electron beams with extremely narrow energy width is provided. Electron microscopes with high resolution and electron spectroscopes with high performance are produced.</p> |
