PHOTO ELECTRO INTEGRATED DEVICE AND MANUFACTURING METHOD THEREOF

摘要

The photoelectric integrated device includes a photodetector having an n-InGaAs channel layer (2), an InP etching stop layer (3), an InGaAs absorbing layer (4) and a P-InP layer (5) sequentially formed on the etched semi-insulating substrate (1) and in a mesa structure, and a transistor having an n-InGaAs channel layer (2), an InP etching stop layer (3), and a P-InP layer (5) sequentially formed on the unetched semi-insulating substrate and a P-InGaAs layer (6) formed in a reverse mesa structure on the layer (5), thereby independently maximizing the functions of the photodetector and transistor.