| 摘要 |
<p>PURPOSE:To realize low resistance wiring and high performance metal-insulator- metal (MIM) nonlinear resistor element having MIM structure by constituting the first metal of a laminar structure of several metals having different properties. CONSTITUTION:A metal 203 comprising aluminum or comprising aluminum as main component is formed on an element substrate 201, on which a metal 202 comprising tantalum or essentially comprising tantalum is laminated as the upper layer. The upper and side surfaces of the metal 202 are covered with an anodically oxidized film 204. As for the lower metal 203, only the side surfaces are covered with an anodically oxidized film 205. An upper electrode 206 comprising Cr is formed to cross the lower electrode having the laminated structure. The crossed part acts as an MIM nonlinear resistive element. By this method, low resistance of wiring is realized and the obtd. liquid crystal display device has high display quality without crosstalk.</p> |
