| 摘要 |
<p>PURPOSE:To provide a method and device for releasing an electrostatic chuck from a semiconductor wafer without damaging the semiconductor element formed on the surface of the wafer by eliminating the electrostatic attraction by using a means which removes the charges accumulated on the surface of the wafer when the wafer is electrostatically chucked. CONSTITUTION:A method for releasing an electrostatic chuck from a wafer is provided for a plasma treatment device which has an electrostatic chuck which permits a semiconductor wafer 22, which is to be treated by plasma by being placed on a bottom electrode 12, to adhere to the bottom electrode 12 by electrostatic attraction. Positive potential is applied to a top electrode which faces the semiconductor wafer 22 and the top electrode is brought closer to the semiconductor wafer 22. The negative charges induced to the surface of the semiconductor wafer being treated by plasma are neutralized and the electrostatic chuck is released.</p> |
