| 摘要 |
PURPOSE:To provide a minute, smaller-pitch, high-pin-count coaxial connection, ready for superhigh speed and less susceptible to leakage current, such as cross talk, through a simple manufacturing process, by coaxially forming a conductor layer for signalling, a first insulating layer, a conductor layer for grounding, and a second insulating layer in one electrode bump. CONSTITUTION:The structure is an electrode structure of semiconductor elements mounted on a board using flip chip connection. Coaxial conductor layers 1 and 2 for signalling and grounding (GND) are formed in one electrode bump. In addition a first insulating layer 3 is formed between these conductor layers 1 and 2, and a second insulating layer 4 is formed outside the grounding (GND) conductor layer 2. The conductor (signalling) 1, first insulator 3, conductor (GND) 2 and second insulator 4 are formed in this order by spraying superfine grain material through a nozzle using a dispenser. A larger nozzle diameter is used in the formation of an outer layer than in inner layer formation. |
