发明名称 MULTILAYER VARISTOR
摘要 PURPOSE:To provide a multilayer varistor in which the voltage nonlinear characteristics can be ensured stably by forming an energy barrier positively while enhancing the breakdown resistance against electrostatic discharge. CONSTITUTION:When a multilayer varistor 1 is produced by embedding at least a pair of inner electrodes 3 in a sintered semiconductor ceramic 1 while sandwiching a ceramic layer 2 exhibiting voltage nonlinear characteristics and presenting at least one crystal particle 7 touching both inner electrodes 3 in the ceramic layer 2 between the inner electrodes 3, the content of Bi in the sintered semiconductor ceramic 4 is set at 0.5wt.% or above when expressed in terms of Bi2O3.
申请公布号 JPH0722209(A) 申请公布日期 1995.01.24
申请号 JP19930164854 申请日期 1993.07.02
申请人 MURATA MFG CO LTD 发明人 NAKAYAMA AKIYOSHI;NAKAMURA KAZUYOSHI;TOMONO KUNISABURO
分类号 C04B35/453;H01C7/10 主分类号 C04B35/453
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