Method of bonding semiconductor substrates

摘要

In a method of bonding semiconductor substrates, a plurality of the semiconductor substrates are first prepared. Surfaces of the semiconductor substrates are mirror-polished. The mirror-polished surface of at least one of the semiconductor substrates is then provided with a hydrophilic property in such a way that an oxide layer is formed on the mirror-polished surface by exposing the mirror-polished surface to an atmosphere of at least one of an oxygen ion and an oxygen radical. A water molecule is then adhered to the mirror-polished surface. The semiconductor substrates then contact with each other through the mirror-polished surface. The contacted semiconductor substrates are then heated. According to such a method of bonding, the semiconductor substrates are strongly bonded to each other with hardly an unbonded region even if the semiconductor substrates are heated at a low temperature.