| 摘要 |
PURPOSE:To provide the method for enabling good patterning of a Cr film without prolong the time for production too much simply by adding one time of a metallic thin film forming stage, such as sputtering and the process for production of the TFT matrix for LCD panels free from defects in wirings, etc. CONSTITUTION:The generation of reaction residues of the Cr film 2 and a resist film 4 is prevented by forming the Cr film 2 on a substrate 1, forming a metallic thin film 3 to be removed in a developing stage for the resist film or a peeling stage for the resist film 4 to be executed afterward thereon, patterning this resist film 4 to a desired shape by exposing and developing and etching away the Cr film 2 with the patterned resist films as a mask. This patterning method for the Cr film 2 is applied to the TFT matrix, such as LCD panels, by which the TFT matrix free from the defects in the wirings, etc., is realized. |
