| 摘要 |
The method includes the steps of sequentially forming an oxide film (13), a 1st Si layer (15) and a nitride film (17) on the substrate (11), forming an opening part (19) into the film (17) to expose the layer (15), forming a 2nd Si layer (21) on the bottom and side wall of the opening part (19) and on the film (17), depositing and etching-back a photoresist layer on the layer (21) to form the photoresist layer on the layer (21) in the part (19), etching the 2nd Si layer (21) by using the residual photo-resist as a mask to expose the layer (17), and removing the photoresist to oxidize the residual layers (21,15) inthe part (19), thereby sequentially oxidizing the 2nd and 1st Si layers (21,15) to reduce the bird's beak.
|
