Bornitridmembran in einer Halbleiterplättchenstruktur.

摘要

A laminated structure includes a wafer member with a membrane attached thereto, the membrane being formed of substantially hydrogen-free boron nitride having a nominal composition B3N. The structure may be a component in a mechanical device for effecting a mechanical function, or the membrane may form a masking layer on the wafer. The structure includes a body formed of at least two wafer members laminated together with a cavity formed therebetween, with the boron nitride membrane extending into the cavity so as to provide the structural component such as a support for a heating element or a membrane in a gas valve. In another aspect borom is selectively diffused from the boron nitride into a <100> surface of a silicon wafer. The surface is then exposed to EDP etchant to which the diffusion layer is resistant, thereby forming a channel the wafer member with smooth walls for fluid flow.