| 摘要 |
An Insulated Gate Bipolar Transistor (IGBT) having a new structure capable of performing a low on-voltage and a high-speed turn-off is provided. A P-type collector region (1) of IGBT is not formed on the entire reverse surface of an N-type base region (2), but formed only on its part, and a metal collector electrode (9) is electrically connected only with the surface to which the P-type collector region (1) exposes. An area of a diffusion window in a collector region is relatively reduced, whereby the impurity concentration of the entire collector region is set at a lower value and hole injection efficiency is decreased. At the same time it is possible to obtain high surface concentration with deep diffusion depth of the collector region required to form a favorable ohmic contact. <IMAGE> |
