| 摘要 |
A groove (4) is formed in a semiconductor layer (1, 3), and a source region (2) is formed at a part of the groove within the semiconductor layer. A control gate (6) is buried via a first insulating layer (5) within the groove. A floating gate (8) is formed via a second insulating layer (5) on the control gate. The floating gate extends over the first insulating layer. A drain region (9, 9') is formed within the semiconductor layer apart from the groove. <IMAGE> |
