发明名称 Substrate used for fabrication of thick film circuit.
摘要 An insulating substrate is used for fabrication of a thick film circuit provided with a conductive pattern made from a paste containing glass frits, and comprises a foundation (1) containing an aluminum nitride and incidental impurities, and a multi-level surface film structure (2) provided between the foundation and the conductive pattern and having a lower surface film (3) of an aluminum oxide provided on a surface of the foundation, an intermediate surface film (4) provided on the lower surface film and formed of a substance having a relatively small acidity and an upper surface film (5) provided on the intermediate surface film and formed of a substance having a relatively large acidity, in which the substance with the large acidity rapidly reacts with the frits in a firing stage for enhancing the adhesion of the conductive pattern but the substance with the relatively small acidity restricts the consumption thereof, so that the total thickness of the multi-level film structure is decreased and, accordingly, the heat radiation capability is improved.
申请公布号 EP0399265(B1) 申请公布日期 1995.01.18
申请号 EP19900108447 申请日期 1990.05.04
申请人 MITSUBISHI MATERIALS CORPORATION 发明人 KUROMITSU, YOSHIROU, C/O MITSUBISHI METAL CORP.;YOSHIDA, HIDEAKI, C/O MITSUBISHI METAL CORP.;NAGASE, TOSHIYUKI, C/O MITSUBISHI METAL CORP.;TANAKA, TADAHARU, C/O MITSUBISHI METAL CORP.;KANDA, YOSHIO, C/O MITSUBISHI METAL CORP.
分类号 H01L23/15;H01L25/16;H05K3/38 主分类号 H01L23/15
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