Semiconductor device having semiconductor body embedded in an envelope made of synthetic material.

摘要

Semiconductor device with a wiring pattern 3, 6 provided with an insulating layer 4 embedded in an envelope 5 made of synthetic material. To prevent hair cracks in the insulating layer 4, the thickness of the insulating layer 4 is so chosen that the lowest point of top 8 of the insulating layer 4 is at a higher level than the highest point of the wiring pattern 3, 6.