| 摘要 |
<p>A distributed amplifier (100) comprises an input side circuit (100a) including a plurality of distributed constant lines (3a,3b,3c) connected in series between an input terminal (1) and ground and a plurality of source-grounded FETs (11a,11b) for switching operation having drains connected to junctions between the distributed constant lines (3a,3b,3c), an output side circuit (100b) including a plurality of distributed constant lines (3d,3e,3f) connected in series between an output terminal (2) and ground, and a plurality of source-grounded amplifier FETs (7a,7b) having gates connected to junctions between the distributed constant lines (3a,3b,3c) of the input side circuit (100a) via capacitors (9a) and drains connected to junctions of the distributed constant lines (3d,3e,3f) of the output side circuit (100b). In this structure, since the input side circuit (100a) also serves as a distributed switch, when a T/R module is fabricated using the distributed amplifier, it is not necessary to add a distributed switch for controlling signal input and output, so that the chip size of the T/R module is reduced compared to the conventional T/R module. In addition, the signal transmission loss is reduced. <IMAGE></p> |
