| 摘要 |
<p>The invention relates to an improvement to a method of manufacture of a micropoint electron source, using a masking step for making the holes of the grid, by means of a mask having corresponding holes, the holes in the mask having sizes and shapes determined in order theoretically to lead to the obtaining of holes in the grid having sizes, shapes and positions lying within given tolerances, the tips of the micropoints being required to be located in the thickness of the grid, the improvement being characterised in that, after having produced an electron source according to the method: - an assessment is made as to whether the source has an emission which is sufficiently homogenous and/or reproducible with another source, - if the emission of the source is judged unhomogenous and/or irreproducible, determination is made of the defects which lie at the cause of this unhomogenous emission and which are due to shapes, sizes or positions of the holes which fall outside the tolerances or to the fact that the tips of the micropoints do not lie in the thickness of the grid, - the mask used during the method is corrected in order to make the future sources fabricated by this method homogenous and/or reproducible, the correction leading to modification of these shapes and/or of the sizes of at least some of the holes in the mask and/or the number of holes in the mask in order to compensate for the defects previously determined by creating additional defects and/or holes. <IMAGE></p> |
