发明名称 INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF
摘要 PURPOSE:To enable an integrated circuit, device composed of a support substrate and a mounted substrate pasted on it to be lessened in thickness, dicing time required for cutting, and parasitic effect caused by the mounted silicon board. CONSTITUTION:An integrated circuit device is composed of a semi-insulating GaAs substrate 1 where transistors 2 are formed on its primary surface and a silicon dioxide thin film 3 where capacitors 4 and inductors 5 are formed on its primary surface. The semi-insulating GaAs substrate 1 and the silicon dioxide thin film 3 are bonded together making their primary surfaces confront each other as they are electrically connected together through conductive bumps 7.
申请公布号 JPH0714876(A) 申请公布日期 1995.01.17
申请号 JP19930145930 申请日期 1993.06.17
申请人 MATSUSHITA ELECTRON CORP 发明人 WATANABE KOJI
分类号 H01L21/60;H01L23/64;H01L25/00;(IPC1-7):H01L21/60;H01L27/095 主分类号 H01L21/60
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