发明名称 |
Manufacturing method of a semiconductor device utilizing thin metal film |
摘要 |
A semiconductor device is manufactured using the electron beam exposure method. A resist is applied on an interlayer dielectric film through a thin metal film, and a contact hole is formed in the interlayer dielectric film. The thin metal film is utilized as a part of a second metal wiring pattern after removing its surface oxides.
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申请公布号 |
US5382544(A) |
申请公布日期 |
1995.01.17 |
申请号 |
US19930066882 |
申请日期 |
1993.05.25 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
MATSUMOTO, MICHIKAZU;HASHIMOTO, KAZUHIKO |
分类号 |
H01L21/027;H01L21/768;(IPC1-7):H01L21/283;H01L21/320 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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