NONVOLATILE SEMICONDUCTOR MEMORY AND SEMICONDUCTOR DISK DEVICE USING THE SAME

摘要

PURPOSE:To make chip performance changable in accordance with uses by allowing the number of the maximum write-in trial of a flash EEPROM to be set to an arbitrary value. CONSTITUTION:DATA for the number of maximum write-in trials indicating the maximum value of the number of write-in trials excuted repeatedly by a read/write control circuit 123 are set in a register 15 and the content of the register 15 is updated by a register rewriting command from the outside. Thus, users can set freely the value of the number of the maximum write-in trials and then the chip performance can be changed freely in accordance with uses of the flash EEPROM 10.