| 摘要 |
PURPOSE:To provide a manufacturing method of a photovoltaic device wherein deterioration of characteristics of a semiconductor thin film which is to be caused by high temperature processing can be prevented, while electrode resistance is reduced by high temperature formation. CONSTITUTION:Insulating paste 3 is formed in a specified pattern on a P-type polycrystalline Si substrate 1. After collector electrode paste 4 is printed on the pattern of the insulating paste 3 and baked at a high temperature, an (n) layer 5 of an a-Si film is formed. |
