| 摘要 |
<p>PURPOSE:To form a high-quality electron beam by laminating a substrate laminated with a conducting layer, a sharpened electrode, and an insulating layer, and forming an electrode insulated from a control electrode around the control electrode. CONSTITUTION:Voltage of tens to 100V is applied to a gate electrode 4 while the potential of a substrate 1, i.e., emitters 2, is used as a reference, and voltage is applied to a peripheral electrode 7 between the substrate 1 and the electrode 4, for example. The distance between the electrode 7 and the electrode 4, a wiring 6, and a bonding pad 5 is set to about 10mum, and it is sufficiently larger than the thickness of lmum of an insulating layer 3. The electrostatic capacity between the electrode 4 and the electrode 7 is sufficiently smaller than the electrostatic capacity between the electrode 4 and the emitters 2, and a possibility of occurrence of an insulation problem is sufficiently small. The insulating layer 3 is exposed on the peripheral section of the substrate 1, and the insulation between the substrate 1 and the bonding pad 5, i.e., the gate electrode 4, and between the substrate 1 and the electrode 7 is secured. Electric charges can be prevented from being accumulated on an insulating film.</p> |
