| 摘要 |
A lateral Semiconductor-On-Insulator (SOI) device includes a substrate, a buried insulating layer on the substrate, and a lateral semiconductor device such as an LDMOS transistor, an LIGBT or a lateral thyristor on the insulating layer. The semiconductor device (in the case of an LDMOS transistor) includes a source region, a channel region, an insulated gate electrode over the channel region, a lateral drift region formed of a continuous layer of a lightly-doped semiconductor material on the buried insulating layer, and a drain contact region which is laterally spaced apart from the channel region and connected to the channel region by the drift region. A buried diode is formed in the substrate, and is electrically coupled to the drain contact region by a portion of the drift region which extends laterally in the region between the drain contact region and the buried diode.
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