| 摘要 |
PURPOSE: To prevent a latch-up and to increase the breakdown voltage by implanting neutral impurity ions into a silicon transistor element. CONSTITUTION: An element 10 has a substrate 12, a buried insulating oxide 14, a drain region 16 and a source region 18. A main body region 24 is a channel region under a gate between the source region and the drain region of the element. In a treatment operation, an annealing treatment is performed after neutral species are implanted to remove a damage caused by implantation. Since the neutral impurities include VIII group atoms such as krypton, xenon, germanium and the atoms are large in size and cause turbulence in a band structure, the scattering centers to high energy carriers in a transistor increases. When a drain field having a neutral impurity center is constant, a collision ionization current decreases and a parasitic bipolar effect also decreases, which can prevent a latch-up and increase the breakdown voltage.
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