发明名称 |
Semiconductor laser and a method for producing the same |
摘要 |
A semiconductor laser including a semiconductor substrate and a multilayer structure formed upon the semiconductor substrate, the multilayer structure including an active layer, a pair of cladding layers between which the active layer is interposed, and a current confinement layer for injecting a current into a stripe-shaped predetermined region of the active layer. The current confinement layer comprises a first current blocking layer formed in regions thereof excluding a region corresponding to the predetermined region of the active layer. The first current blocking layer has a refractive index higher than a refractive index of the pair of cladding layers and an energy band gap larger than an energy band gap of the active layer.
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申请公布号 |
US5383214(A) |
申请公布日期 |
1995.01.17 |
申请号 |
US19930092358 |
申请日期 |
1993.07.15 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KIDOGUCHI, ISAO;KAMIYAMA, SATOSHI;OHNAKA, KIYOSHI |
分类号 |
H01S5/10;H01S5/20;H01S5/22;H01S5/223;H01S5/32;H01S5/323;(IPC1-7):H01S3/19 |
主分类号 |
H01S5/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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