| 摘要 |
An integrated semiconductor laser and light modulator includes a semiconductor substrate having a first surface, a semiconductor laser disposed on the first surface of the semiconductor substrate, an electric field absorption type light modulator passing and cutting off the light generated by the semiconductor laser, the semiconductor substrate including a groove opposite the modulator filled with a first semiconductor layer having a lattice constant smaller than that of the semiconductor substrate, having a surface coplanar with the first surface of the semiconductor substrate, and producing misfit dislocations at the growth interface, and a second semiconductor layer epitaxially grown on the first surface of the semiconductor substrate lattice matching with the semiconductor substrate. The electric field absorption type light modulator active layer is the part of the second semiconductor layer grown on the first semiconductor layer into which distortion is introduced by the dislocations, and the semiconductor laser is disposed on a different part of the first semiconductor layer. Therefore, the light generated in the semiconductor laser efficiently propagates into the light modulator.
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