| 摘要 |
PURPOSE:To completely remove the bubbles generated on the bonded surface of a supporting substrate and a semiconductor substrate by a method wherein high pressure air is introduced from a plurality of apertures provided on a plate and pressure is applied to the semiconductor substrate from the center part of the semiconductor substrate to outside when the supporting substrate and the semiconductor substrate are adhered. CONSTITUTION:High pressure gas is introduced from a gas introducing pipe 11a by opening a valve 12a, and the center part on a semiconductor substrate 104 is pressed from the aperture 10a formed on the center part of a plate. The center part only of the semiconductor substrate 10 is pressed as above- mentioned. As a result, bubbles are moved toward the outer edge side of the semiconductor substrate 104. Then, high pressure gas is introduced by opening the valves 12b and 12c successively, and the semiconductor substrate 104 is pressed from apertures 10b and 10c from the center part of the pressing plate toward the outer edge side.
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