| 摘要 |
PURPOSE:To form a node electrode and capacity contact hole of a DRAM containing stack capacity in a single lithography process. CONSTITUTION:On a silicon nitride film 10 which is the top layer of a layer insulation film, the first polycrystal silicon film 1 and the first silicon oxide film are formed, and after the first hole is formed, the second polycrystal silicon film 14a is formed an its side wall. With these 11 and 14a used as masks, a capacity contact hole and the third hole 16 are opened. Then, the third polycrystal silicon film 17 is deposited, and with this in between, a spacer 18 which is a silicon oxide film is formed on the side face of the second cylinder- like polycrystal silicon film 14, and then with this as a nucleus, a cylinder-like node electrode 20 is formed. |
