发明名称 |
Dynamic random access memory |
摘要 |
A dynamic random access memory includes a plurality of DRAM cell units having a bit contact region and DRAM cells formed on an active region, wherein the DRAM cells each comprised of a transistor and a capacitor connected to the transistor are arranged symmetrically to the right and left sides in a bit contact connected with the active region to form the DRAM cell unit; and the DRAM cell units are arranged with a prescribed pitch in the direction of X and arranged in the direction of Y shifted with one third of the pitch toward the direction of X.
|
申请公布号 |
US5383151(A) |
申请公布日期 |
1995.01.17 |
申请号 |
US19930101248 |
申请日期 |
1993.08.02 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
ONISHI, SHIGEO;TANAKA, KENICHI;SAKIYAMA, KEIZO |
分类号 |
H01L27/108;(IPC1-7):G11C11/24 |
主分类号 |
H01L27/108 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|