| 摘要 |
PURPOSE:To provide a semiconductor device of a multilayer interconnection structure, which is superior in an adhesion between a connection plug and a metal wiring layer and has high contact resistance. CONSTITUTION:A semiconductor device of a multilayer interconnection structure comprises a lower metal wiring layer 30 formed on a substrate 10, an insulating film 40 formed on the surface of the substrate 10 including the wiring layer 30, an open hole 50 bored in the film 40 by a method, wherein a prescribed position on the film 40 is etched away to make the wiring layer 30 expose, and the wiring layer 30 directly under the open hole 50. Moreover, the device comprises a recessed part 51, which is formed by etching and has a diameter longer than that of the hole 50, and a via plug 52 formed in the recessed part 51 and in the hole 50 by growing a metal film from the recessed part 51 formed in the exposed wiring layer 30. |
