| 摘要 |
PURPOSE:To protect a GaAs layer against crack by lowering the temperature required for growing the GaAs layer thereby retraining the stress caused by the difference of thermal expansion between an Si substrate and the GaAs layer. CONSTITUTION:In the method for producing a GaAs substrate by epitaxially growing a GaAs layer on a silicon substrate, a first GaAs layer 12 is grown by 0.2mum or less on the silicon substrate 11 at 500 deg.C or below, and then a second GaAs layer 13 is grown thereon at 600 deg.C or above such that the total thickness will be 3mum or less. A third GaAs layer 14 is further grown thereon at 500 deg.C or below such that the total thickness will be 5-7mum thus producing a GaAs substrate. An ohmic electrode and a Schottky electrode are formed, respectively, on the Si surface and the GaAs surface of a GaAs substrate thus producing a Schottky barrier diode element. |
